vishay siliconix sum110p06-08l document number: 73045 s-80273-rev. b, 11-feb-08 www.vishay.com 1 p-channel 60-v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? package with low thermal resistance ? 100 % r g tested product summary v ds (v) r ds(on) ( ) i d (a) d - 60 0.008 at v gs = - 10 v - 110 0.0105 at v gs = - 4.5 v to-263 s d g top view ordering information: sum110p06-08l SUM110P06-08L-E3 (lead (pb)-free) s g d p-channel mosfet notes: a. duty cycle 1 %. b. when mounted on 1" square pcb (fr-4 material). c. see soa curve for voltage derating. d. limited by package. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 60 v gate-source voltage v gs 20 continuous drain current d (t j = 175 c) t c = 25 c i d - 110 a t c = 125 c - 75 pulsed drain current i dm - 200 avalanche current l = 0.1 mh i as - 85 single pulse avalanche energy d e as 211 mj maximum power dissipation t c = 25 c p d 272 c w t a = 25 c b 3.75 b operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount d r thja 40 c/w junction-to-case r thjc 0.55 a v aila b le rohs* compliant
www.vishay.com 2 document number: 73045 s-80273-rev. b, 11-feb-08 vishay siliconix sum110p06-08l notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = - 250 a - 60 v gate-threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 60 v, v gs = 0 v - 1 a v ds = - 60 v, v gs = 0 v, t j = 125 c - 50 v ds = - 60 v, v gs = 0 v, t j = 175 c - 250 on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v - 120 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 30 a 0.0065 0.008 v gs = - 10 v, i d = - 30 a, t j = 125 c 0.0129 v gs = - 10 v, i d = - 30 a, t j = 175 c 0.016 v gs = - 4.5 v, i d = - 20 a 0.0085 0.0105 forward transconductance a g fs v ds = - 15 v, i d = - 50 a 20 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1 mhz 9200 pf output capacitance c oss 975 reverse transfer capacitance c rss 760 total gate charge c q g v ds = - 30 v, v gs = - 10 v, i d = - 110 a 160 240 nc gate-source charge c q gs 40 gate-drain charge c q gd 36 gate resistance r g f = 1 mhz 1.5 3 4.5 tu r n - o n d e l ay t i m e c t d(on) v dd = - 30 v, r l = 0.27 i d ? - 110 a, v gen = - 10 v, r g = 2.5 20 30 ns rise time c t r 190 285 turn-off delay time c t d(off) 140 210 fall time c t f 300 450 source-drain diode ratings and characteristics t c = 25 c b continuous current i s - 110 a pulsed current i sm - 200 forward voltage a v sd i f = - 50 a, v gs = 0 v - 1.0 - 1.5 v reverse recovery time t rr i f = - 50 a, di/dt = 100 a/s 60 90 ns peak reverse recovery charge i rm(rec) - 3 - 4.5 a reverse recovery charge q rr 0.09 0.2 c
document number: 73045 s-80273-rev. b, 11-feb-08 www.vishay.com 3 vishay siliconix sum110p06-08l typical characteristics 25 c, unless otherwise noted output characteristics transconductance capacitance 0 40 8 0 120 160 200 0246 8 10 v ds ? drain-to-so u rce v oltage ( v ) ? drain c u rrent (a) i d v gs = 10 thr u 5 v 3 v 4 v 0 40 8 0 120 160 200 0 10203040506070 8 0 i d ? drain c u rrent (a) ? transcond u ctance (s) g fs t c = - 55 c 25 c 125 c 0 3000 6000 9000 12000 15000 0 102030405060 v ds ? drain-to-so u rce v oltage ( v ) c ? capacitance (pf) c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 40 8 0 120 160 200 0123456 v gs ? gate-to-so u rce v oltage ( v ) ? drain c u rrent (a) i d 25 c -55 c t c = 125 c 0.000 0.004 0.00 8 0.012 0.016 0.020 0204060 8 0 100 120 ? on-resistance ( ) i d ? drain c u rrent (a) r ds(on) v gs = 10 v v gs = 4.5 v 0 4 8 12 16 20 040 8 0 120 160 200 240 2 8 0320 ? gate-to-so u rce v oltage ( v ) q g ? total gate charge (nc) v gs v ds = 30 v i d = 110 a
www.vishay.com 4 document number: 73045 s-80273-rev. b, 11-feb-08 vishay siliconix sum110p06-08l typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature avalanche current vs. time 0.5 0. 8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 t j ? j u nction temperat u re (c) v gs = 10 v i d = 30 a r ds(on) ? on-resistance ( n ormalized) t in (s) 1000 10 0.00001 0.001 0.1 1 100 (a) i da v 0.01 0.0001 i a v (a) at t a = 25 c i a v (a) at t a = 150 c 1 0.1 source-drain diode forward voltage drain source breakdown vs. junction temperature 0.0 0.3 0.6 0.9 1.2 v sd ? so u rce-to-drain v oltage ( v ) ? so u rce c u rrent (a) i s 100 10 1 t j = 25 c t j = 150 c 56 60 64 6 8 72 76 - 50 - 25 0 25 50 75 100 125 150 175 t j ? j u nction temperat u re (c) ( v ) v (br)dss i d = 250 a
document number: 73045 s-80273-rev. b, 11-feb-08 www.vishay.com 5 vishay siliconix sum110p06-08l thermal ratings vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73045. maximum avalanche and drain current vs. case temperature 0 50 100 150 200 0 25 50 75 100 125 150 175 t c ? case temperat u re (c) ? drain c u rrent (a) i d package limited safe operating area 1000 1 0.1 1 10 100 limited b y r ds(on) * 0.1 10 ? drain c u rrent (a) i d 10 s 100 s t c = 25 c single p u lse 100 ms, dc 10 ms 100 1 ms v ds ? drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified normalized thermal transient impedance, junction-to-case s qu are w a v e p u lse d u ration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 n ormalized effecti v e transient thermal impedance 1 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 1. d u ty cycle, d = 2. per unit base = r thja = 62.5 c/ w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
